Field Effect Transistors (FET/JFET/MOSFET) — A/L Physics
Aligned with the NIE syllabus
What must I remember about Field Effect Transistors (FET/JFET/MOSFET)?
- Field Effect Transistor Concept: Unipolar voltage-controlled three-terminal semiconductor device where conduction current through a conducting channel (Drain to Source) is modulated by an electrostatic electric field applied at the Gate terminal.
- JFET Architecture (Junction FET): n-channel JFET consists of an n-type semiconductor bar with two embedded p-type gate regions forming p-n junctions; Gate-Source junction is ALWAYS operated under REVERSE BIAS (Vgs ≤ 0); Gate input impedance is extremely high (> 10⁸ Ω) with essentially zero gate current (Ig ≈ 0).
- Pinch-Off Voltage (Vp): Value of Drain-Source voltage Vds at which the depletion layers from opposing gates meet across the channel, causing drain current Id to saturate at a constant value (Idss for Vgs = 0).
- MOSFET (Metal-Oxide-Semiconductor FET): Insulated gate separated from channel by an ultra-thin silicon dioxide (SiO2) dielectric layer; features virtually infinite input resistance (> 10¹² Ω); available in Enhancement mode (normally OFF, channel induced by gate voltage) and Depletion mode (normally ON).
Test yourself (1 minute)
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BJT vs FET Key Differences
BJT is bipolar (conduction by both electrons and holes) and CURRENT-controlled; FET is unipolar (conduction solely by majority carriers) and VOLTAGE-controlled with far higher input impedance and lower thermal noise.
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Shockley's Equation for JFET
In the active/saturation region: Id = Idss * [1 - (Vgs / Vp)]², where Idss is drain saturation current at zero gate bias and Vp is pinch-off voltage.
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Static Electricity Sensitivity of MOSFETs
The ultra-thin SiO2 gate oxide insulation can easily be punctured and permanently destroyed by electrostatic discharge (ESD) from human hands; stored in conductive antistatic foam.
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Source: NIE G.C.E. (A/L) Physics Resource Book - Unit 9: Electronics
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Unit 9.5 · Year 2 · Term 2
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